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DG12N65

DGME
Part Number DG12N65
Manufacturer DGME
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Published Apr 12, 2017
Detailed Description DG12N65 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG12N65N，， ，，，。 ，，。 DG12N65 is an N-channel e...
Datasheet PDF File DG12N65 PDF File

DG12N65
DG12N65

Overview
DG12N65 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.
0 General Description DG12N65N，， ，，，。 ，，。 DG12N65 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.
The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.
MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 650 12 0.
8 23 V A Ω pF Symbol Package 1 /8 ABSOLUTE MAXI...


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