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DG1N60

DGME
Part Number DG1N60
Manufacturer DGME
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Published Apr 12, 2017
Detailed Description DG1N60 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG1N60N，， ，，，。 ，，。 DG1N60 is an N-channel enhan...
Datasheet PDF File DG1N60 PDF File

DG1N60
DG1N60

Overview
DG1N60 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.
0 General Description DG1N60N，， ，，，。 ，，。 DG1N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.
The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.
MAINCHARACTERISTICS VDSS ID RDS(ON) Crss 600 1.
3 9.
0 5.
0 V A Ω pF Symbol Package 1 /11 ABSOLUTE MAXIM...


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