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TSD5N60M

Truesemi
Part Number TSD5N60M
Manufacturer Truesemi
Description N-Channel MOSFET
Published Apr 12, 2017
Detailed Description TSD5N60M / TSU5N60M TSD5N60M/TSU5N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Ma...
Datasheet PDF File TSD5N60M PDF File

TSD5N60M
TSD5N60M

Overview
TSD5N60M / TSU5N60M TSD5N60M/TSU5N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features - 3.
0A, 600V, RDS(on) = 2.
5Ω@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS GDS G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalan...


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