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TSF640M

Truesemi
Part Number TSF640M
Manufacturer Truesemi
Description N-Channel MOSFET
Published Apr 12, 2017
Detailed Description TSP640M / TSF640M 200V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced pla...
Datasheet PDF File TSF640M PDF File

TSF640M
TSF640M

Overview
TSP640M / TSF640M 200V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features • 18.
0A, 200V, RDS(on) = 0.
18Ω @VGS = 10 V • Low gate charge ( typical 40nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability {D GDS TO-220 GD S TO-220F ● ◀▲ {G ● ● {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Av...


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