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TSU2N60M

Truesemi
Part Number TSU2N60M
Manufacturer Truesemi
Description N-Channel MOSFET
Published Apr 13, 2017
Detailed Description TSD2N60M/TSU2N60M TSD2N60M/TSU2N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using True...
Datasheet PDF File TSU2N60M PDF File

TSU2N60M
TSU2N60M

Overview
TSD2N60M/TSU2N60M TSD2N60M/TSU2N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features • 1.
9A,600V,Max.
RDS(on)=5.
00 Ω @ VGS =10V • Low gate charge(typical 9nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy ...


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