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SSM2602Y

Part Number	SSM2602Y
Manufacturer	Silicon Standard
Description	N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Published	Apr 13, 2017
Detailed Description	SSM2602Y N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Capable of 2.5V gate drive Low on-resistance Surface mount package Des...
Datasheet	SSM2602Y PDF File

Overview

SSM2602Y N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Capable of 2.
5V gate drive Low on-resistance Surface mount package Description S D D G SOT-26 D D These Power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistance in an extremely efficient and cost-effective device.
The SOT-26 package is widely used for commercial and industrial surface-mount applications.
BV DSS R DS(ON) ID 20V 34mΩ 5.
3A D G S Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=70°C IDM Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.
5V Continuous Drain Current3, VGS @ 4.
5V Pulsed Drain Current1,2 PD @ TA...

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