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HCS20NT60V

Part Number	HCS20NT60V
Manufacturer	SemiHow
Description	N-Channel MOSFET
Published	Apr 14, 2017
Detailed Description	HCS20NT60V Apr 2014 HCS20NT60V 600V N-Channel Super Junction MOSFET BVDSS = 600 V RDS(on) typ = 0.17 ȍ ID = 20 A FEA...
Datasheet	HCS20NT60V PDF File

Overview

HCS20NT60V Apr 2014 HCS20NT60V 600V N-Channel Super Junction MOSFET BVDSS = 600 V RDS(on) typ = 0.
17 ȍ ID = 20 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 54 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 0.
17 ȍ7\S#9GS=10V 100% Avalanche Tested RoHS Compliant TO-220F 12 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 600 20* 12.
5* 60* ρ30 500 10 1 4.
5 PD Power Dissipation (TC =...

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HCS20NT60V N-Channel MOSFET - SemiHow

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