N-Channel MOSFET
Description
HFD5N65U_HFU5N65U
HFD5N65U / HFU5N65U
650V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.3 ȍ7\S#9GS=10V 100% Ava...
Similar Datasheet