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HFA11N90

Part Number	HFA11N90
Manufacturer	SemiHow
Description	N-Channel MOSFET
Published	Apr 14, 2017
Detailed Description	HFA11N90 March 2014 HFA11N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ ȍ ID = 11 A FEATURES Originati...
Datasheet	HFA11N90 PDF File

Overview

HFA11N90 March 2014 HFA11N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ ȍ ID = 11 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 75 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested TO-247 12 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed ...

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HFA11N90 N-Channel MOSFET - SemiHow

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