N-Channel MOSFET
Description
HCS65R160T Super Junction MOSFET
Jan 2016
HCS65R160T
650V N-Channel Super Junction MOSFET
Features
Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested
Key Parameters
Parameter BVDSS @Tj,max
ID RDS(on), max
Qg, Typ
Value 700 20 0.16 41
Unit V A ȍ nC
Application
Switch Mode Power Su...
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