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GA05JT12-263

GeneSiC
Part Number GA05JT12-263
Manufacturer GeneSiC
Description Junction Transistor
Published Apr 14, 2017
Detailed Description GA05JT12-263   Normally – OFF Silicon Carbide Junction Transistor Features Package VDS RDS(ON) ID = 1200 V = 260 mΩ ...
Datasheet PDF File GA05JT12-263 PDF File

GA05JT12-263
GA05JT12-263

Overview
GA05JT12-263   Normally – OFF Silicon Carbide Junction Transistor Features Package VDS RDS(ON) ID = 1200 V = 260 mΩ = 5A  175 °C maximum operating temperature  Temperature independent switching performance  Gate oxide free SiC switch  Suitable for connecting an anti-parallel diode  Positive temperature coefficient for easy paralleling  Low gate charge  Low intrinsic output capacitance  RoHS Compliant D DS G D G S TO-263 Advantages   Applications  SiC transistor most compatible with existing Si gate-drivers  Low switching losses  Higher efficiency  High temperature operation  High short circuit withstand capability Absolute Maximum Ratings  Down Hole Oil Drilling, Geothermal Instrumentation  Hybrid Electric Vehicles (HEV)  Solar Inverters  Switched-Mode Power Supply (SMPS)  Power Factor Correction (PFC)  Induction Heating  Uninterruptible Power Supply (UPS)  Motor Drives Parameter Drain – Source Voltage ...


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