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GS66516T

Part Number	GS66516T
Manufacturer	GaN Systems
Description	Top cooled 650V enhancement mode GaN transistor
Published	Apr 14, 2017
Detailed Description	GS66516T Top-side cooled 650 V E-mode GaN transistor Preliminary Datasheet Features • 650 V enhancement mode power swit...
Datasheet	GS66516T PDF File

Overview

GS66516T Top-side cooled 650 V E-mode GaN transistor Preliminary Datasheet Features • 650 V enhancement mode power switch • Top-side cooled configuration • RDS(on) = 25 mΩ • IDS(max) = 60 A • Ultra-low FOM Island Technology™ die • Low inductance GaNPX® package • Easy gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 / +10 V ) • Very high switching frequency (> 100 MHz) • Fast and controllable fall and rise times • Reverse current capability • Zero reverse recovery loss • Small 9 x 7.
6 mm2 PCB footprint • Dual gate pads for optimal board layout • RoHS 6 compliant Package Outline Circuit Symbol The thermal pad is internally connected to Source (S- pin 3) and substra...

Similar Datasheet

GS66516T Top cooled 650V enhancement mode GaN transistor - GaN Systems

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