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SW10N60D

SEMIPOWER
Part Number SW10N60D
Manufacturer SEMIPOWER
Description MOSFET
Published Apr 20, 2017
Detailed Description SAMWIN SW10N60D N-channel TO-220F MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 1.1Ω)@VGS=10V ■ Gate Charge (Typic...
Datasheet PDF File SW10N60D PDF File

SW10N60D
SW10N60D

Overview
SAMWIN SW10N60D N-channel TO-220F MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 1.
1Ω)@VGS=10V ■ Gate Charge (Typical 35nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F 1 23 BVDSS : 600V ID : 10A RDS(ON) : 1.
1Ω 2 1.
Gate 2.
Drain 3.
Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.
1 3 Order...


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