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SW2N10

SEMIPOWER
Part Number SW2N10
Manufacturer SEMIPOWER
Description MOSFET
Published Apr 20, 2017
Detailed Description SAMWIN SW2N10 N-channel SOT-23 MOSFET Features ■ High ruggedness ■ RDS(ON) (Max0.24Ω)@VGS=10V ■ Gate Charge (Typical ...
Datasheet PDF File SW2N10 PDF File

SW2N10
SW2N10

Overview
SAMWIN SW2N10 N-channel SOT-23 MOSFET Features ■ High ruggedness ■ RDS(ON) (Max0.
24Ω)@VGS=10V ■ Gate Charge (Typical 13nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested SOT-23 3 2 1 1.
Gate 2.
Source 3.
Drain General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
BVDSS : 100V ID : 2A RDS(ON) :0.
24Ω 2 1 3 Order Codes Item Sales Type 1 SW E 2N10 Absolute maximum ratings Marking SW2N10 Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed Gate to Source Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy Peak ...


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