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SVF830F

Silan Microelectronics
Part Number SVF830F
Manufacturer Silan Microelectronics
Description MOSFET
Published Apr 21, 2017
Detailed Description SVD830T/F/D_Datasheet 4.5A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD830T/F/D is an N-channel enhancement mode pow...
Datasheet PDF File SVF830F PDF File

SVF830F
SVF830F

Overview
SVD830T/F/D_Datasheet 4.
5A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD830T/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology.
The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES ∗ 4.
5A,500V,RDS(on(typ)=1.
3Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability ORDERING SPECIFICATIONS Part No.
SVD830T SVD830F SVD830D SVD830DTR Package TO-220-3L TO-220F-3L TO-252-2L TO-252-2L Marking SVD830T SVD830F SVD830D SVD830D Material Pb free Pb free Pb free Pb free Packing Tube Tube Tube Tape & Reel ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise n...


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