MOSFET
Description
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
RDSON (MAX.)
60mΩ
ID 5A
UIS, 100% Tested
Pb‐Free Lead Plating
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
VGS
Continuous Drain Current Pulsed Drain Curren...
Similar Datasheet
- EMB60A06G MOSFET - Excelliance MOS
- EMB60A06S MOSFET - Excelliance MOS
- EMB60A06V MOSFET - Excelliance MOS