MOSFET
Description
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
D
RDSON (MAX.)
85mΩ
ID ‐3A G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current Pulsed Drain Current1
...
Similar Datasheet
- EMB80P03G MOSFET - Excelliance MOS
- EMB80P03J MOSFET - Excelliance MOS
- EMB80P03JS MOSFET - Excelliance MOS
- EMB80P03VAT MOSFET - Excelliance MOS