MOSFET
Description
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
2.1mΩ
ID
100A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMP21N03HC
LIMITS
UNIT
Gate‐Source Voltage
...
Similar Datasheet
- EMP21N03HC MOSFET - Excelliance MOS
