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NGTB30N120IHRWG

Part Number	NGTB30N120IHRWG
Manufacturer	ON Semiconductor
Description	IGBT
Published	Apr 29, 2017
Detailed Description	NGTB30N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robus...
Datasheet	NGTB30N120IHRWG PDF File

Overview

NGTB30N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss.
The IGBT is well suited for resonant or soft switching applications.
Features • Extremely Efficient Trench with Fieldstop Technology • Low Switching Loss Reduces System Power Dissipation • Optimized for Low Losses IH Cooker Application • Reliable and Cost Effective Single Die Solution • These are Pb−Free Devices Typical Applications • Inductive Heating • Consumer Appliances • Soft Sw...

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NGTB30N120IHRWG IGBT - ON Semiconductor

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