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NGTB20N135IHRWG

ON Semiconductor
Part Number NGTB20N135IHRWG
Manufacturer ON Semiconductor
Description IGBT
Published Apr 29, 2017
Detailed Description NGTB20N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robus...
Datasheet PDF File NGTB20N135IHRWG PDF File

NGTB20N135IHRWG
NGTB20N135IHRWG

Overview
NGTB20N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss.
The IGBT is well suited for resonant or soft switching applications.
Features • Extremely Efficient Trench with Fieldstop Technology • 1350 V Breakdown Voltage • Optimized for Low Losses in IH Cooker Application • Reliable and Cost Effective Single Die Solution • These are Pb−Free Devices Typical Applications • Inductive Heating • Consumer Appliances • Soft Switching ABSOLUTE MAXIMUM ...


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