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NGTB05N60R2DT4G

ON Semiconductor

IGBT


Description
NGTB05N60R2DT4G IGBT 600V, 8A, N-Channel www.onsemi.com Features  Reverse Conducting II IGBT  IGBT VCE(sat)=1.65V (typ) [IC=5A, VGE=15V]  IGBT tf=95ns (typ) Diode VF=1.5V (typ) [IF=5A] Diode trr=70ns (typ) 5s Short Circuit Capability Applications  General Purpose Inverter Electrical Connection N-Channel 2,4 1 1:Gate 2:Collector 3:Emitter 3 4:Co...



ON Semiconductor

NGTB05N60R2DT4G

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