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MBM29LV400TC-70

Part Number	MBM29LV400TC-70
Manufacturer	Fujitsu
Description	4M (512K x 8/256K x 16) BIT FLASH MEMORY
Published	May 7, 2017
Detailed Description	FUJITSU SEMICONDUCTOR DATA SHEET DS05-20862-3E FLASH MEMORY CMOS 4M (512K × 8/256K × 16) BIT MBM29LV400TC-70/-90/-12/...
Datasheet	MBM29LV400TC-70 PDF File

Overview

FUJITSU SEMICONDUCTOR DATA SHEET DS05-20862-3E FLASH MEMORY CMOS 4M (512K × 8/256K × 16) BIT MBM29LV400TC-70/-90/-12/MBM29LV400BC-70/-90/-12 s FEATURES • Single 3.
0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type) 44-pin SOP (Package suffix: PF) 48-pin CSOP (Package suffix: PCV) 48-ball FBGA (Package suffix: PBT) • Minimum 100,000 program/erase cycles • High performance 70 ns maximum access time • Sector erase architecture One 8K word, two 4K words, one 16K word, and seven 32K words sectors in word mode One 16K byte, two 8K bytes, one 32K byte, and seven 64K bytes sectors in byte mode Any combination of sectors can be concurrently erased.
Also supports full chip erase • Boot Code Sector Architecture T = Top sector B = Bottom sect...

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