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MPF6661

Motorola
Part Number MPF6661
Manufacturer Motorola
Description TMOS SWITCHING TRANSISTORS
Published May 8, 2017
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPF6659/D TMOS FET Transistors N–Channel — Enhancement 3...
Datasheet PDF File MPF6661 PDF File

MPF6661
MPF6661

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPF6659/D TMOS FET Transistors N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol MPF6659 MPF6660 MPF6661 Unit Drain – Source Voltage VDS 35 60 90 Vdc Drain – Gate Voltage VDG 35 60 90 Vdc Gate–Source Voltage — Continuous VGS ± 20 Vdc — Non–repetitive (tp ≤ 50 µs) VGSM ± 40 Vpk Drain Current Adc Continuous(1) ID 2.
0 Pulsed(2) IDM 3.
0 Total Device Dissipation @ TC = 25°C Derate above 25°C PD 2.
5 Watts 20 mW/°C Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.
0 Watts 8.
0 mW/°C Operating and Storage Junction TJ, Tstg Temperature Range – 55 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Zero–Gate–Voltage Drain Current (VDS = Maximum Rating, VGS = 0) Gate–Body Leakage Current (VGS = 15 Vdc, VDS = 0) Drain–Source Breakdown Voltage (VGS = 0, ID = 10 µ...


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