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MMBR911MLT1

Microsemi
Part Number MMBR911MLT1
Manufacturer Microsemi
Description RF & MICROWAVE TRANSISTORS
Published Jun 23, 2017
Detailed Description WWW.Microsemi .COM PRELIMINARY RF PRODUCTS DIVISION MMBR911MLT1 RF & MICROWAVE TRANSISTORS DESCRIPTION The MMBR911ML...
Datasheet PDF File MMBR911MLT1 PDF File

MMBR911MLT1
MMBR911MLT1

Overview
WWW.
Microsemi .
COM PRELIMINARY RF PRODUCTS DIVISION MMBR911MLT1 RF & MICROWAVE TRANSISTORS DESCRIPTION The MMBR911MLT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.
microsemi.
com KEY FEATURES ! High FTau-6.
0 GHz ! Low noise-2.
9dB@1GHz ! Low cost SOT23 package Symbol VCBO VCEO VEBO IC PDISS TJ TSTG ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C) Parameter Value Collector-Base Voltage 20 Collector-Emitter Voltage 12 Emitter-Base Voltage 2.
0 Device Current 60 Power Dissipation 333 Junction Temperature 150 Storage Temperature -55 to +150 Unit V V V mA mW C C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 225 C/W APPLICATIONS/BENEFITS ! LNA, Oscillator, Pre-Driver SOT-23 MMBR911MLT1 Symbol BVCBO BVCEO ICBO hFE STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C) Test IC = .
1mA IC =1.
0mA VCB =15V VCE =10V Conditions IE = 0 IB = 0 IE =...


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