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IRF840A

Power MOSFET

Description

IRF840A Power MOSFET VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A Drain D Gate Drain Source N Channel G Symbol S ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise Parameter Symbol Test Conditions Drain to Source Breakdown Voltage Drain to Source Leakage Current Gate to Source Leakage Current Gate Threshold Voltage V(BR)DSS V...

TRANSYS

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