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2N6515

Part Number	2N6515
Manufacturer	Samsung
Description	NPN EPITAXIAL SILICON TRANSISTOR
Published	Jul 14, 2017
Detailed Description	2N6515 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VCEO= 250V • Collector Di...
Datasheet	2N6515 PDF File

Overview

2N6515 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VCEO= 250V • Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC TJ TSTG 250 250 6 500 625 150 -55 ~ 150 Unit V V V mA m&&W TO-92 ELECTRICAL CHARACTERISTICS (TA=25 ) Characteristic Symbol Test Conditions %CCoolllleeccttoorr--EBmasiteteBr rBeraekadkodwonwnVoVlotaltgaege Emitter-Base Breakdown Voltage Collector Cut-off Current %EDmCitCteurrrCeuntt-oGffaCinurrent BVCEO...

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