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T1200EB45E

IXYS
Part Number T1200EB45E
Manufacturer IXYS
Description Insulated Gate Bi-Polar Transistor
Published Aug 1, 2017
Detailed Description Date:- 19 Oct, 2009 Data Sheet Issue:- 1 Provisional Data Insulated Gate Bi-Polar Transistor Type T1200EB45E Absolute ...
Datasheet PDF File T1200EB45E PDF File

T1200EB45E
T1200EB45E

Overview
Date:- 19 Oct, 2009 Data Sheet Issue:- 1 Provisional Data Insulated Gate Bi-Polar Transistor Type T1200EB45E Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate Peak gate – emitter voltage MAXIMUM LIMITS 4500 2800 ±20 UNITS V V V IC(DC) ICRM IECO PMAX Tj op Tstg RATINGS Continuous DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=100µs, (note 2 & 3) Maximum power dissipation, IGBT (note 2) Operating temperature range Storage temperature range Notes: - 1) Unless otherwise indicated Tj = 125ºC 2) Tsink = 25°C, double side cooled 3) The use of a...


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