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VI30M120C

Part Number	VI30M120C
Manufacturer	Vishay
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Published	Aug 22, 2017
Detailed Description	www.vishay.com V30M120C, VI30M120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifie...
Datasheet	VI30M120C PDF File

Overview

www.
vishay.
com V30M120C, VI30M120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
52 V at IF = 5 A TO-220AB TMBS ® TO-262AA K 3 2 1 V30M120C PIN 1 PIN 2 PIN 3 CASE 3 2 1 VI30M120C PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max.
Package 2 x 15 A 120 V 150 A 0.
68 V 175 °C TO-220AB, TO-262AA Diode variations Dual common cathode FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max.
10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.
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