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NGTB40N65IHRWG

ON Semiconductor
Part Number NGTB40N65IHRWG
Manufacturer ON Semiconductor
Description IGBT
Published Aug 27, 2017
Detailed Description NGTB40N65IHRWG IGBT with Monolithic Reverse Conducting Diode This Insulated Gate Bipolar Transistor (IGBT) features rob...
Datasheet PDF File NGTB40N65IHRWG PDF File

NGTB40N65IHRWG
NGTB40N65IHRWG

Overview
NGTB40N65IHRWG IGBT with Monolithic Reverse Conducting Diode This Insulated Gate Bipolar Transistor (IGBT) features robust and cost effective Field Stop (FS2) trench construction with a monolithic RC Diode.
It provides a cost effective Solution for applications where diode losses are minimal.
The IGBT is optimized for low conduction losses (low VCEsat) and is well suited for resonant or soft switching applications.
Features • Extremely Efficient Trench with Fieldstop Technology • Low Conduction Design for Soft Switching Application • Reduced Power Dissipation in Inducting Heating Application • Reliable and Cost Effective Single Die Solution • This is a Pb−Free Device Typical Applications • Inductive Heating • Air Conditioning PFC • Welding ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C Pulsed collector current, tpulse limited by TJmax, 10 ms pulse, VGE = 15 V Diode forward current @ TC ...


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