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NGTB50N120FL2WG

ON Semiconductor
Part Number NGTB50N120FL2WG
Manufacturer ON Semiconductor
Description IGBT
Published Aug 27, 2017
Detailed Description IGBT - Field Stop II NGTB50N120FL2WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective ...
Datasheet PDF File NGTB50N120FL2WG PDF File

NGTB50N120FL2WG
NGTB50N120FL2WG

Overview
IGBT - Field Stop II NGTB50N120FL2WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
The IGBT is well suited for UPS and solar applications.
Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Features • Extremely Efficient Trench with Field Stop Technology • TJmax = 175°C • Soft Fast Reverse Recovery Diode • Optimized for High Speed Switching • 10 ms Short Circuit Capability • These are Pb−Free Devices Typical Applications • Solar In...


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