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NGTB75N60FL2WG

ON Semiconductor
Part Number NGTB75N60FL2WG
Manufacturer ON Semiconductor
Description IGBT
Published Aug 27, 2017
Detailed Description NGTB75N60FL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) ...
Datasheet PDF File NGTB75N60FL2WG PDF File

NGTB75N60FL2WG
NGTB75N60FL2WG

Overview
NGTB75N60FL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
Features • Extremely Efficient Trench with Field Stop Technology • TJmax = 175°C • Soft Fast Reverse Recovery Diode • Optimized for High Speed Switching • 5 ms Short−Circuit Capability • These are Pb−Free Devices Typical Applications • Solar Inverters • Uninterruptible Power Supplies (UPS) • Welding ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES 600 V IC A 100 75 Diode Forward Current @ TC = 25°C @ TC = 100°C IF A 100 75 Diode Pulsed Current TPULSE Limited by TJ Max IFM 200 A Pulsed collector current, Tpulse limited by TJmax Short−circuit withstand time VGE = 15 V, VCE = 400 V, TJ ≤ +150°C Gate...


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