Features
2.7V to 3.6V Read/Write Operation Fast Read Access Time - 120 ns Internal Erase/Program Control Sector Architecture
– One 8K Words (16K bytes) Boot Block with Programming Lockout
– Two 4K Words (8K bytes) Parameter Blocks
– One 240K Words (480K bytes) Main Memory Array Block Fast Sector Erase Time - 10 seconds Byte-by-Byte or Word-By-Wor...