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Am29DL400B

AMD
Part Number Am29DL400B
Manufacturer AMD
Description 4 Megabit CMOS 3.0 Volt-only Simultaneous Operation Flash Memory
Published Oct 3, 2017
Detailed Description Am29DL400B 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE...
Datasheet PDF File Am29DL400B PDF File

Am29DL400B
Am29DL400B

Overview
Am29DL400B 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.
0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS s Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from the other bank — Zero latency between read and write operations — Read-while-erase — Read-while-program s Single power supply operation — 2.
7 to 3.
6 volt read and write operations for battery-powered applications s Manufactured on 0.
32 µm process technology s High performance — Access times as fast as 70 ns s Low current consumption (typical values at 5 MHz) — 7 mA active read current — 21 mA active read-while-program or read-while- erase current — 17 mA active program-while-erase-suspended current — 200 nA in standby mode — 200 nA in automatic sleep mode — Standard tCE chip enable access time applies to transition from automatic sleep mode to active mode s Flexible sector architecture — Two 16 K...


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