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BUK9610-30

NXP

TrenchMOS transistor Logic level FET


Description
Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to ...



NXP

BUK9610-30

PDF File BUK9610-30 PDF File


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