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GPT06N60

Part Number	GPT06N60
Manufacturer	Greatpower
Description	POWER FIELD EFFECT TRANSISTOR
Published	Nov 8, 2017
Detailed Description	GENERAL DESCRIPTION GPT06N60 POWER FIELD EFFECT TRANSISTOR FEATURES This advanced high voltage MOSFET is designed to w...
Datasheet	GPT06N60 PDF File

Overview

GENERAL DESCRIPTION GPT06N60 POWER FIELD EFFECT TRANSISTOR FEATURES This advanced high voltage MOSFET is designed to withstand Higher Current Rating high energy in the avalanche mode and switch efficiently.
This Lower Rds(on) new high energy device also offers a drain-to-source diode Lower Capacitances with fast recovery time.
Designed for high voltage, high speed Lower Total Gate Charge switching applications such as power supplies, converters, Tighter VSD Specifications power motor controls and bridge circuits.
Avalanche Energy Specified PIN CONFIGURATION SYMBOL TO-220/TO-220FP Top View TO-251 Front View TO-252 Front View D GATE DRAIN SOURCE GATE DRAIN SOURCE G 12 3 ...

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