POWER FIELD EFFECT TRANSISTOR
Description
06GENERAL DESCRIPTION
GPT03N65
POWER FIELD EFFECT TRANSISTOR
FEATURES
This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplie...
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