0.5-12 GHz Low Noise Gallium Arsenide FET
Description
0.5 – 12 GHz Low Noise Gallium Arsenide FET
Technical Data
ATF-10236
Features
Low Noise Figure: 0.8␣ dB Typical at 4␣ GHz
Low Bias: VDS= 2 V, IDS= 20␣ mA
High Associated Gain: 13.0␣ dB Typical at 4␣ GHz
High Output Power: 20.0␣ dBm Typical P1dBat 4␣ GHz
Cost Effective Ceramic Microstrip Package
Tape-And-Reel Packaging Option Available [1]
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