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ATF-25570

HP
Part Number ATF-25570
Manufacturer HP
Description 0.5-10 GHz General Purpose Gallium Arsenide FET
Published Nov 8, 2017
Detailed Description 0.5 – 10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25570 Features • High Output Power: 20.5 dBm Typi...
Datasheet PDF File ATF-25570 PDF File

ATF-25570
ATF-25570

Overview
0.
5 – 10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25570 Features • High Output Power: 20.
5 dBm Typical P1 dB at 4 GHz • Low Noise Figure: 1.
0 dB Typical at 4 GHz • High Associated Gain: 14.
0 dB Typical at 4 GHz • Hermetic Gold-Ceramic Microstrip Package Description The ATF-25570 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a hermetic, high reliabil- ity package.
This device is designed for use in general purpose amplifier and oscillator applications in the 0.
5-10 GHz frequency range.
This GaAs FET device has a nominal 0.
3 micron gate length using airbridge interconnects between drain fingers.
Total gate periphery is 500 m...


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