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BUZ111SL

Siemens Semiconductor Group
Part Number BUZ111SL
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ111SL SPP80N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt r...
Datasheet PDF File BUZ111SL PDF File

BUZ111SL
BUZ111SL

Overview
BUZ111SL SPP80N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 80 A RDS(on) 0.
01 Ω Package Ordering Code BUZ111SL TO-220 AB Q67040-S4003-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 100 °C ID A 80 Pulsed drain current TC = 25 °C IDpuls 320 E AS Avalanche energy, single pulse ID = 80 A, V DD = 25 V, RGS = 25 Ω L = 220 µH, Tj = 25 °C mJ 700 IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 80 A, VDS = 40 V, diF/dt = 200 A/µ...


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