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K7R320884M

Part Number	K7R320884M
Manufacturer	Samsung semiconductor
Description	1M x 36 & 2M x 18 QDR II b4 SRAM
Published	Nov 23, 2017
Detailed Description	K7R323684M K7R321884M K7R320884M Preliminary 1Mx36 & 2Mx18 & 4Mx8 QDRTM II b4 SRAM Document Title 1Mx36-bit, 2Mx18-bi...
Datasheet	K7R320884M PDF File

Overview

K7R323684M K7R321884M K7R320884M Preliminary 1Mx36 & 2Mx18 & 4Mx8 QDRTM II b4 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx8-bit QDRTM II b4 SRAM Revision History Rev.
No.
History 0.
0 1.
Initial document.
0.
1 1.
Package dimension modify.
P.
20 from 13mmx15mm to 15mmx17mm 0.
2 1.
Pin name change from DLL to Doff.
2.
Vddq range change from 1.
5V to 1.
5V~1.
8V.
3.
Update JTAG test conditions.
4.
Reserved pin for high density name change from NC to Vss/SA 5.
Delete AC test condition about Clock Input timing Reference Level 6.
Delete clock description on page 2 and add HSTL I/O comment 0.
3 1.
Update current characteristics in DC electrical characteristics 2.
Change AC timing characteristics...

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K7R320884M 1M x 36 & 2M x 18 QDR II b4 SRAM - Samsung semiconductor

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