Silicon MOS type integrated circuit
Description
MIP3E3SMY
MOS
(IPD)
■
(MIP2ExD
■
■
50% )
VD 700 VC 8 ID 1.1 IDP 1.7 IC 0.1 Tch 150 Tstg −55 ∼ +150
V V A A A °C °C
■
Control
Max. duty clock
SQ RQ
SQ RQ
13.5±0.5 4.2±0.3 Solder Dip
15.4±0.3
2.8±0.2 1.5±0.2
10.5±0.5 9.5±0.2 8.0±0.2
Unit : mm 4.5±0.2
1.4±0.1
6.7±0.3 2.8±0.2
φ 3.7±0.2
1.4±0.1 0.8±0.1
2.54±0.3 5.08±0.5
(9.3)
2.5±0.2 0....
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