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E28F010

Part Number	E28F010
Manufacturer	Intel
Description	1024K (128K x 8) CMOS FLASH MEMORY
Published	Jan 5, 2018
Detailed Description	E 28F010 1024K (128K X 8) CMOS FLASH MEMORY 8 n Flash Electrical Chip-Erase  1 Second Typical Chip-Erase n Quick-Puls...
Datasheet	E28F010 PDF File

Overview

E 28F010 1024K (128K X 8) CMOS FLASH MEMORY 8 n Flash Electrical Chip-Erase  1 Second Typical Chip-Erase n Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  2 Second Chip-Program n 100,000 Erase/Program Cycles n 12.
0 V ±5% VPP n High-Performance Read  90 ns Maximum Access Time n CMOS Low Power Consumption  10 mA Typical Active Current  50 µA Typical Standby Current  0 Watts Data Retention Power n Integrated Program/Erase Stop Timer n Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface n Noise Immunity Features  ±10% VCC Tolerance  Maximum Latch-Up Immunity through EPI Processing n ETOX™ Nonvolatile Flash Technology  EPROM-Comp...

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