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BFR181

Part Number	BFR181
Manufacturer	Siemens Semiconductor Group
Description	NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
Published	Mar 23, 2005
Detailed Description	BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 1...
Datasheet	BFR181 PDF File

Overview

BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.
5 mA to 12mA • fT = 8GHz F = 1.
45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 181 RFs Q62702-F1314 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 20 2 mW 175 150 - 65 .
.
.
+ 150 - 65 .
.
.
+ 150 ≤ 335 °C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS ≤ 91 °C Junction temperature Ambient temperature ...

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