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BFS17W

Infineon Technologies AG
Part Number BFS17W
Manufacturer Infineon Technologies AG
Description NPN Silicon RF Transistor
Published Mar 23, 2005
Detailed Description NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA • Pb-free (RoH...
Datasheet PDF File BFS17W PDF File

BFS17W
BFS17W

Overview
NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA • Pb-free (RoHS compliant) package BFS17W 32 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS17W Marking Pin Configuration MCs 1=B 2=E 3=C Package SOT323 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, f = 10 MHz Total power dissipation1) TS ≤ 93 °C Junction temperature Ambient temperature VCEO VCBO VEBO IC ICM Ptot TJ TA 15 25 2.
5 25 50 280 150 -65 .
.
.
150 Storage temperature TStg -65 .
.
.
150 Thermal Resistance Parameter Symbol Value Junction - soldering point2) RthJS ≤ 205 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mW °C Unit K/W 1 2011-07-20 BFS17W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min.
typ.
max.
DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 10 V, IE = 0 VCB = 25 V, IE = 0 Emitter-base cutoff current VEB = 2.
5 V, IC = 0 DC current gain IC = 2 mA, VCE = 1 V, pulse measured IC = 25 mA, VCE = 1 V, pulse measured Collector-emitter saturation voltage IC = 10 mA, IB = 1 mA V(BR)CEO 15 - - ICBO IEBO - - 0.
05 - - 10 - - 100 hFE VCEsat 40 - 150 20 70 - - 0.
1 0.
4 Unit V µA V 2 2011-07-20 BFS17W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min.
typ.
AC Characteristics (verified by random sampling) Transition frequency IC = 2 mA, VCE = 5 V, f = 200 MHz IC = 25 mA, VCE = 5 V, f = 200 MHz fT 1 1.
4 1.
3 2.
5 Collector-base capacitance VCB = 5 V, f = 1 MHz, VBE = 0 , emitter grounded Ccb - 0.
55 max.
0.
8 Unit GHz pF Collector emitter ca...


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