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BGB540
A 35 dB Gain-Sloped LNB I.F. Amplifier
Description
Data sheet, BGB540, Sept. 2002 BGB540 Active Biased RF
Transistor
MMIC Wireless Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2002-09-11 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002. All Rights Reserved. Attention please! The information herein is given to describe certain ...
Infineon Technologies AG
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