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BGF944

NXP
Part Number BGF944
Manufacturer NXP
Description GSM900 EDGE power module
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF944 GSM900 EDGE power module Product specification Supersedes data of 200...
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BGF944
BGF944

Overview
DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF944 GSM900 EDGE power module Product specification Supersedes data of 2003 Feb 26 2003 Jun 06 Philips Semiconductors Product specification GSM900 EDGE power module FEATURES • Typical GSM EDGE performance at a supply voltage of 26 V: – Output power = 2.
5 W – Gain = 29 dB – Efficiency = 15% – ACPR < −65 dBc at 400 kHz – rms EVM < 0.
4% – peak EVM < 1.
2% • Low distortion to a GSM EDGE signal • Excellent 2-tone performance • Low die temperature due to copper flange • Integrated temperature compensated bias • 50 Ω input/output impedance • Flat gain over frequency band.
APPLICATIONS • Base station RF power amplifiers in the 920 to 960 MHz frequency b...


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