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TC58NYG2S0FBAI4
4 GBIT (512M x 8-BIT) CMOS NAND E2PROM
Description
TC58NYG2S0FBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NYG2S0F is a single 1.8V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 224) bytes 64 pages 2048blocks. The device has two 4320-byte static regist...
Toshiba
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TC58NYG2S0FBAI4
4 GBIT (512M x 8-BIT) CMOS NAND E2PROM
- Toshiba
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