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M02N601D1

CITC
Part Number M02N601D1
Manufacturer CITC
Description Silicon N-Channel Power MOSFET
Published Mar 13, 2018
Detailed Description M02N601D1 600V N-Channel General Purpose Switching Device Applications ■ Features • 600V, 2.0A, RDS(on) = maximum 5Ω@VG...
Datasheet PDF File M02N601D1 PDF File

M02N601D1
M02N601D1


Overview
M02N601D1 600V N-Channel General Purpose Switching Device Applications ■ Features • 600V, 2.
0A, RDS(on) = maximum 5Ω@VGS = 10V.
• 100% avalanche, EAS tested.
• Suffix "G" indicates Halogen-free part, ex.
M02N601D1G.
■ Outline TO-251 0.
264(6.
7) 0.
248(6.
3) 0.
205(5.
2) 0.
189(4.
8) 0.
060(1.
52) 0.
058(1.
48) 0.
098(2.
5) 0.
083(2.
1) 0.
024(0.
6) 0.
016(0.
4) 0.
193(4.
9) 0.
181(4.
6) 0.
217(5.
52) 0.
216(5.
48) 0.
583(14.
80) 0.
559(14.
20) 0.
209(5.
3) 0.
193(4.
9) ■ Mechanical data • Epoxy:UL94-V0 rated flame retardant • Case : JEDEC TO-251 molded plastic body over passivated chip • Lead : Axial leads, solderable per MIL-STD-202, Method 208 guranteed.
GDS 0.
035(0.
90) 0.
020(0.
50) 0.
297(7.
55) 0.
293(7.
45) 0.
035(0.
90) 0.
020(0.
50) 0.
091(2.
30)TYP.
0.
031(0.
80) 0.
016(0.
40) 0.
026(0.
65) 0.
014(0.
35) Drain Gate Source Dimensions in inches and (millimeters) ■ Maximum ratings Rating at 25OC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive...


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