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FNK10P170K

FNK
Part Number FNK10P170K
Manufacturer FNK
Description P-Channel Power MOSFET
Published Mar 16, 2018
Detailed Description FNK P-Channel Enhancement Mode Power MOSFET Description The FNK10P170K uses advanced trench technology and design to pro...
Datasheet PDF File FNK10P170K PDF File

FNK10P170K
FNK10P170K

Overview
FNK P-Channel Enhancement Mode Power MOSFET Description The FNK10P170K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
It is ESD protested.
FNK10P170K General Features ● VDS =-100V,ID =-13A RDS(ON) <200mΩ @ VGS=-10V (Typ:170mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density celldesign for ultra low on-resistance Schematic diagram Application ● Power switch ● DC/DC converters TO-252 -2Ltop view Package Marking and Ordering Information Device Marking Device Device Package FNK10P170K FNK10P170K TO-252-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation IDM PD ...


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