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CGHV1F006S

Cree
Part Number CGHV1F006S
Manufacturer Cree
Description GaN HEMT
Published Mar 19, 2018
Detailed Description CGHV1F006S 6 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobili...
Datasheet PDF File CGHV1F006S PDF File

CGHV1F006S
CGHV1F006S

Overview
CGHV1F006S 6 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities.
The device can be deployed for L, S, C, X and Ku-Band amplifier applications.
The datasheet specifications are based on a C-Band (5.
5 - 6.
5 GHz) amplifier.
Additional application circuits are available for C-Band at 5.
8 GHz - 7.
2 GHz and X-Band at 7.
9 - 8.
4 GHz and 8.
5 9.
6 GHz.
The CGHV1F006S operates on a 40 volt rail circuit while housed in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package.
Under reduced power, the transistor can operate below 40V to as low...


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